Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interface
Identifieur interne : 013911 ( Main/Repository ); précédent : 013910; suivant : 013912Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interface
Auteurs : RBID : Pascal:99-0523207Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
A detailed study of current transport at the Schottky-type n-InP | poly(pyrrole) interface is presented. At room temperature, this interface exhibits an average quality factor of n=1.02±0.02, a C-V barrier height of qbCV=0.78±0.01eV, and a surface recombination velocity over two orders-of-magnitude slower than at ideal n-InP metal interfaces. These latter two parameters imply an effective barrier height of 0.9 eV, which is among the highest values ever reported for an n-InP Schottky-type diode. The quality factor increases monotonically with decreasing temperature reaching a value of 1.23 at 98 K. Substantial curvature is also observed in a Richardson plot at reduced temperature. These temperature dependencies can be quantitatively modeled using thermionic emission theory in the presence of barrier inhomogeneities. Standard models, including thermionic emission with image force effects, interfacial layer models with and without surface states, and tunneling, do not adequately explain the temperature dependence of the quality factor and the curvature in the Richardson plot. © 1999 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 014119
Links to Exploration step
Pascal:99-0523207Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interface</title><author><name sortKey="Jones, Frank E" uniqKey="Jones F">Frank E. Jones</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Wood, Ben P" uniqKey="Wood B">Ben P. Wood</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Myers, James A" uniqKey="Myers J">James A. Myers</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Daniels Hafer, Carrie" uniqKey="Daniels Hafer C">Carrie Daniels Hafer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Lonergan, Mark C" uniqKey="Lonergan M">Mark C. Lonergan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0523207</idno><date when="1999-12-01">1999-12-01</date><idno type="stanalyst">PASCAL 99-0523207 AIP</idno><idno type="RBID">Pascal:99-0523207</idno><idno type="wicri:Area/Main/Corpus">014119</idno><idno type="wicri:Area/Main/Repository">013911</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conducting polymers</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface structure</term><term>Schottky barriers</term><term>Surface recombination</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7361P</term><term>7340N</term><term>6835C</term><term>7325</term><term>7350G</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Polymère conducteur</term><term>Barrière Schottky</term><term>Structure interface</term><term>Recombinaison superficielle</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A detailed study of current transport at the Schottky-type n-InP | poly(pyrrole) interface is presented. At room temperature, this interface exhibits an average quality factor of n=1.02±0.02, a C-V barrier height of q<sub>b</sub><sup>CV</sup>=0.78±0.01eV, and a surface recombination velocity over two orders-of-magnitude slower than at ideal n-InP metal interfaces. These latter two parameters imply an effective barrier height of 0.9 eV, which is among the highest values ever reported for an n-InP Schottky-type diode. The quality factor increases monotonically with decreasing temperature reaching a value of 1.23 at 98 K. Substantial curvature is also observed in a Richardson plot at reduced temperature. These temperature dependencies can be quantitatively modeled using thermionic emission theory in the presence of barrier inhomogeneities. Standard models, including thermionic emission with image force effects, interfacial layer models with and without surface states, and tunneling, do not adequately explain the temperature dependence of the quality factor and the curvature in the Richardson plot. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>86</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interface</s1></fA08><fA11 i1="01" i2="1"><s1>JONES (Frank E.)</s1></fA11><fA11 i1="02" i2="1"><s1>WOOD (Ben P.)</s1></fA11><fA11 i1="03" i2="1"><s1>MYERS (James A.)</s1></fA11><fA11 i1="04" i2="1"><s1>DANIELS HAFER (Carrie)</s1></fA11><fA11 i1="05" i2="1"><s1>LONERGAN (Mark C.)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>6431-6441</s1></fA20><fA21><s1>1999-12-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0523207</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A detailed study of current transport at the Schottky-type n-InP | poly(pyrrole) interface is presented. At room temperature, this interface exhibits an average quality factor of n=1.02±0.02, a C-V barrier height of q<sub>b</sub><sup>CV</sup>=0.78±0.01eV, and a surface recombination velocity over two orders-of-magnitude slower than at ideal n-InP metal interfaces. These latter two parameters imply an effective barrier height of 0.9 eV, which is among the highest values ever reported for an n-InP Schottky-type diode. The quality factor increases monotonically with decreasing temperature reaching a value of 1.23 at 98 K. Substantial curvature is also observed in a Richardson plot at reduced temperature. These temperature dependencies can be quantitatively modeled using thermionic emission theory in the presence of barrier inhomogeneities. Standard models, including thermionic emission with image force effects, interfacial layer models with and without surface states, and tunneling, do not adequately explain the temperature dependence of the quality factor and the curvature in the Richardson plot. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C61P</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C40N</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35C</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C25</s0></fC02><fC02 i1="06" i2="3"><s0>001B70C50G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7361P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7340N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6835C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7325</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7350G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Polymère conducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Conducting polymers</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Barrière Schottky</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Schottky barriers</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Structure interface</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Interface structure</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Recombinaison superficielle</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface recombination</s0></fC03><fN21><s1>333</s1></fN21><fN47 i1="01" i2="1"><s0>9945M000214</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 013911 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 013911 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:99-0523207
|texte= Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interface
}}
| This area was generated with Dilib version V0.5.77. |  |